 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SD2256 Silicon NPN Triple Diffused ADE-208-928 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB1494 Features * High breakdown voltage and high current (VCEO = 120 V, I C = 25 A) * Built-in C-E diode Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 1 2 3 3 2SD2256 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID* 1 1 Ratings 120 120 7 25 35 120 150 -55 to +150 25 Unit V V V A A W C C A Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 120 7 -- -- 2000 500 -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- Max -- -- -- -- 10 10 20000 -- 2.0 3.5 3.0 4.5 V V V V Unit V V V V A A Test conditions I C = 0.1 mA, IE = 0 I C = 25 mA, RBE = I C = 200 mA, RBE = I E = 50 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = VCE = 4 V, IC = 12 A*1 VCE = 4 V, IC = 25 A*1 I C = 12 A, IB = 24 mA*1 I C = 25 A, IB = 250 mA*1 I C = 12 A, IB = 24 mA*1 I C = 25 A, IB = 250 mA*1 Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current VCEO(sus) V(BR)EBO I CBO I CEO DC current transfer ratio hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test. VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 2 2SD2256 Maximum Collector Dissipation Curve 120 Collector power dissipation PC (W) 100 iC(peak) Collector current IC (A) 30 IC(max) 10 Area of Safe Operation 80 1m s PW DC C s 5 0m =2 C =1 n( T tio 3 1.0 Ta = 25C 0.3 1 shot pulse 0.1 Op er a 40 ) 0 50 100 Case temperature TC (C) 150 3 10 30 100 300 Collector to emitter voltage VCE (V) Typical Output Characteristics 20 5.0 DC Current Transfer Ratio vs. Collector Current 10,000 DC current transfer ratio hFE 3,000 1,000 300 100 30 10 0.1 VCE = 4 V 4.0 .5 3 3.0 2.5 Collector current IC (A) 16 TC = 25C TC = 2.0 12 1.5 8 C 75 C 25 C 25 - 4 1.0 mA IB = 0 0 1 2 3 4 5 Collector to emitter voltage VCE (V) 0.3 3 10 1.0 30 Collector current IC (A) 100 3 2SD2256 Saturation Voltage vs. Collector Current 10 TC = 25C IC/IB = 200 Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) 3 VBE(sat) 1.0 VCE(sat) 0.3 0.1 0.1 0.3 1.0 10 3 30 Collector current IC (A) 100 Transient Thermal Resistance 10 Thermal resistance j-c (C/W) 3 TC = 25C 1.0 0.3 0.1 1m 10 m 100 m 1.0 Time t (s) 10 100 1000 4 2SD2256 Package Dimensions Unit: mm 5.0 0.3 15.6 0.3 1.0 3.2 0.2 4.8 0.2 1.5 0.5 14.9 0.2 19.9 0.2 1.6 1.4 Max 2.0 2.8 18.0 0.5 1.0 0.2 2.0 0.6 0.2 3.6 0.9 1.0 5.45 0.5 5.45 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) TO-3P -- Conforms 5.0 g 0.3 5 2SD2256 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Copyright (c) Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 6 |
Price & Availability of 2SD2256
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |